A thoroughly updated third edition of an classic and widely adopted text, perfect for practical transistor design and in the classroom. Covering a variety of recent developments, the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices, as well as factors affecting performance. Containing around 25% new material, coverage has been expanded to include high-k gate dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modelling of MOSFETs, short-channel FinFETS, and symmetric lateral bipolar transistors on SOI. Chapters have been reorganized to integrate the appendices into the main text to enable a smoother learning experience, and numerous additional end-of-chapter homework exercises (+30%) are included to engage students with real-world problems and test their understanding. A perfect text for senior undergraduate and graduate students taking advanced semiconductor devices courses, and for practicing silicon device professionals in the semiconductor industry.
Product details
Publisher : Cambridge University Press; 3rd edition (2 December 2021)
Language : English
Hardcover : 622 pages
ISBN-10 : 1108480020
ISBN-13 : 978-1108480024
Dimensions : 17.78 x 3.18 x 24.77 cm
Best Sellers Rank: 73,507 in Books (See Top 100 in Books)
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Customer Reviews: 4.3
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